MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

摘要

According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

主权项

1. A method for manufacturing a magnetoresistive element comprising:
forming a stacked body including a reference layer, a tunnel barrier layer and a storage layer; processing the stacked body by process including RIE (reactive ion etching) process; and implanting another element being different from element included in the storage layer into a surface of the storage layer exposed by processing the stacked body.