| 摘要 |
The present invention is characterized by including a plurality of capacitors provided with: a plurality of lower electrodes which extend in a third direction orthogonal to a semiconductor substrate surface; a support film which is positioned flatly and in a manner so as to connect to the upper ends of the outer peripheral side surfaces of the lower electrodes, and which has openings that contain the plurality of lower electrodes; a capacitance insulating film which covers a surface of the lower electrodes; and an upper electrode which covers a surface of the capacitance insulating film. The present invention is also characterized in that the plurality of capacitors comprise: first capacitors provided with first lower electrodes, some of the upper ends of said lower electrodes being positioned in the openings in a planar view; and second capacitors provided with second lower electrodes, the upper ends of said lower electrodes not being positioned in the openings, and in that the first lower electrodes comprise: a first section not positioned in the opening; and a second section positioned in the opening. The upper ends of the first sections are positioned between the upper surface of the support film and the lower surface of the support film, and the upper ends of the second sections are positioned below the lower surface of the support film. The upper ends of the second lower electrodes are positioned between the upper surface of the support film and the lower surface of the support film. |
| 主权项 |
1. A semiconductor device comprising:
a plurality of lower electrodes extending in a third direction perpendicular to a semiconductor substrate surface; a support film which is located in a plate-like manner, connected to an upper end portion of an outer peripheral side surface of each lower electrode, and which has an opening encompassing a plurality of the lower electrodes; a capacitative insulating film covering the surfaces of the lower electrodes; and an upper electrode covering the surface of the capacitative insulating film, wherein the plurality of capacitors include first capacitors provided with first lower electrodes in which a portion of the upper end of the lower electrode is located within the opening as seen in a plan view, and second capacitors provided with second lower electrodes in which the upper end of the lower electrode is not located within the opening, and wherein the first lower electrodes are formed from a first part which is not located within the opening, and a second part which is located within the opening, and the upper end of the first part is located between the upper surface of the support film and the lower surface of the support film, the upper end of the second part is located lower than the lower surface of the support film, and the upper end of the second lower electrode is located between the upper surface of the support film and the lower surface of the support film. |
