METHOD FOR THE FORMATION OF FIN STRUCTURES FOR FINFET DEVICES

摘要

On a first semiconductor material substrate, an overlying sacrificial layer formed of a second semiconductor material is deposited. In a first region, a first semiconductor material region is formed over the sacrificial layer. In a second region, a second semiconductor material region is formed over the sacrificial layer. The first semiconductor material region is patterned to define a first FinFET fin. The second semiconductor material region is patterned to define a second FinFET fin. The fins are each covered with a cap and sidewall spacer. The sacrificial layer formed of the second semiconductor material is then selectively removed to form an opening below each of the first and second FinFET fins (with those fins being supported by the sidewall spacers). The openings below each of the fins are then filled with a dielectric material that serves to isolate the semiconductive materials of the fins from the substrate.

主权项

1. A method, comprising:
on a substrate formed of a first semiconductor material and having a first region and a second region, depositing an overlying sacrificial layer formed of a second semiconductor material; forming for the first region a region of first semiconductor material over the sacrificial layer; forming for the second region a region of second semiconductor material over the sacrificial layer; patterning the region of first semiconductor material to define at least one first fin of a FinFET transistor of a first conductivity type; patterning the region of second semiconductor material to define at least one second fin of a FinFET transistor of a second conductivity type; covering each of the first and second fins with a cap and sidewall spacer; selectively removing the sacrificial layer formed of the second semiconductor material to form an opening below each of the first and second fins, each first and second fin being supported by said sidewall spacer; and filling the opening below each of the first and second fins with a dielectric material so as to isolate the first and second fins from the substrate.