| 发明名称 |
Method for Forming a Semiconductor Device and Semiconductor Device |
| 摘要 |
A method for forming a semiconductor device includes depositing an epitaxial layer on a semiconductor substrate, forming an oxygen diffusion region within the epitaxial layer by oxygen diffusion from the semiconductor substrate into a part of the epitaxial layer and tempering at least the oxygen diffusion region of the epitaxial layer at a temperature between 400° C. and 480° C. for more than 15 minutes. |
| 申请公布号 |
US2015325440(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201514706435 |
申请日期 |
2015.05.07 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Schulze Hans-Joachim;Laven Johannes |
| 分类号 |
H01L21/02;H01L29/36;H01L27/04;H01L21/266;H01L21/225 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device, the method comprising:
depositing an epitaxial layer on a semiconductor substrate; forming an oxygen diffusion region within the epitaxial layer by oxygen diffusion from the semiconductor substrate into a part of the epitaxial layer; and tempering at least the oxygen diffusion region of the epitaxial layer at a temperature between 400° C. and 480° C. for more than 15 minutes. |
| 地址 |
Neubiberg DE |
