| 发明名称 |
APPARATUS AND METHOD FOR DYNAMIC CONTROL OF ION BEAM ENERGY AND ANGLE |
| 摘要 |
In one embodiment a method of etching a substrate includes directing a first ion beam to the substrate through an extraction plate of a processing apparatus using a first set of control settings of the processing apparatus. The method may further include detecting a signal from the substrate that indicates a change in material being etched by the first ion beam from a first material to a second material, adjusting control settings of the processing apparatus to a second set of control settings different from the first set of control settings based on the second material, and directing a second ion beam to the substrate through the extraction plate using the second set of control settings. |
| 申请公布号 |
US2015325410(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201414274018 |
申请日期 |
2014.05.09 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Godet Ludovic;Distaso Daniel;Munoz Nini;Ma Tristan;Liu Yu |
| 分类号 |
H01J37/32;C23C14/54;C23C14/34;H01L43/12 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of etching a substrate, comprising:
directing a first ion beam to the substrate through an extraction plate of a processing apparatus using a first set of control settings of the processing apparatus; detecting a signal from the substrate that indicates a change in material being etched by the first ion beam from a first material to a second material; adjusting control settings of the processing apparatus to a second set of control settings different from the first set of control settings based on the second material; and directing a second ion beam to the substrate through the extraction plate using the second set of control settings. |
| 地址 |
Gloucester MA US |
