发明名称 PATTERNING METHOD USING IMPRINT MOLD, PATTERN STRUCTURE FABRICATED BY THE METHOD, AND IMPRINTING SYSTEM
摘要 A patterning method using an imprint mold, to form an imprinted pattern structure, includes providing a resist layer from which the pattern structure will be formed, performing a first imprint process on a first area of the resist layer by using the imprint mold to form a first pattern of the pattern structure through deformation of the resist layer in the first area, and performing a second imprint process on a second area of the resist layer by using the imprint mold to form a second pattern of the pattern structure through deformation of the resist layer in the second area. The first and second areas are overlapped with each other in a third area of the resist layer, and the performing the second imprint process deforms a first portion of the first pattern in the third area to form the second pattern
申请公布号 US2015321415(A1) 申请公布日期 2015.11.12
申请号 US201514633272 申请日期 2015.02.27
申请人 Samsung Electronics Co., Ltd. 发明人 Lee Sunghoon;Kim Dongouk;Park Joonyong;Bae Jihyun;Shin Bongsu;Lee Hongseok;Chung Jaeseung;Hahm Sukgyu
分类号 B29C59/02;G02B5/30;G02B1/12 主分类号 B29C59/02
代理机构 代理人
主权项 1. A patterning method using an imprint mold, for forming an imprinted pattern structure, the patterning method comprising: providing a resist layer from which the imprinted pattern structure is formed; performing a first imprint process on a first area of the resist layer by using the imprint mold to form a first pattern of the pattern structure through deformation of the resist layer in the first area; and performing a second imprint process on a second area of the resist layer by using the imprint mold to form a second pattern of the pattern structure through deformation of the resist layer in the second area, wherein the first and second areas are overlapped with each other in a third area of the resist layer, and the performing the second imprint process deforms a first portion of the first pattern in the third area to form the second pattern.
地址 Suwon-si KR