发明名称 |
PATTERNING METHOD USING IMPRINT MOLD, PATTERN STRUCTURE FABRICATED BY THE METHOD, AND IMPRINTING SYSTEM |
摘要 |
A patterning method using an imprint mold, to form an imprinted pattern structure, includes providing a resist layer from which the pattern structure will be formed, performing a first imprint process on a first area of the resist layer by using the imprint mold to form a first pattern of the pattern structure through deformation of the resist layer in the first area, and performing a second imprint process on a second area of the resist layer by using the imprint mold to form a second pattern of the pattern structure through deformation of the resist layer in the second area. The first and second areas are overlapped with each other in a third area of the resist layer, and the performing the second imprint process deforms a first portion of the first pattern in the third area to form the second pattern |
申请公布号 |
US2015321415(A1) |
申请公布日期 |
2015.11.12 |
申请号 |
US201514633272 |
申请日期 |
2015.02.27 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Lee Sunghoon;Kim Dongouk;Park Joonyong;Bae Jihyun;Shin Bongsu;Lee Hongseok;Chung Jaeseung;Hahm Sukgyu |
分类号 |
B29C59/02;G02B5/30;G02B1/12 |
主分类号 |
B29C59/02 |
代理机构 |
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代理人 |
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主权项 |
1. A patterning method using an imprint mold, for forming an imprinted pattern structure, the patterning method comprising:
providing a resist layer from which the imprinted pattern structure is formed; performing a first imprint process on a first area of the resist layer by using the imprint mold to form a first pattern of the pattern structure through deformation of the resist layer in the first area; and performing a second imprint process on a second area of the resist layer by using the imprint mold to form a second pattern of the pattern structure through deformation of the resist layer in the second area, wherein the first and second areas are overlapped with each other in a third area of the resist layer, and the performing the second imprint process deforms a first portion of the first pattern in the third area to form the second pattern. |
地址 |
Suwon-si KR |