SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

The purpose of the present technique is to provide: an SiC epitaxial wafer which enables sufficiently high yield of device; and a method for manufacturing a silicon carbide semiconductor device. This SiC epitaxial wafer is provided with a silicon carbide substrate, a defect reducing layer that is formed on the silicon carbide substrate, and a drift layer that is formed on the defect reducing layer. The number of carrot defects occurred in regions other than the vicinity of the interface between the defect reducing layer and the silicon carbide substrate is from 4.5 times to 7.5 times (inclusive) the number of carrot defects occurred in the vicinity of the interface between the defect reducing layer and the silicon carbide substrate.