| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the like on which a transistor which operates within a voltage range of equal to or higher than a reference potential and a transistor which operates in a voltage range equal to or less than the reference voltage are merged on the same semiconductor substrate.SOLUTION: A semiconductor device comprises: a first conductivity type semiconductor substrate; a second conductivity type embedded diffusion layer provided in the semiconductor substrate; a second conductivity type impurity diffusion region for separating a first region from a second region by being connected to the embedded diffusion layer and surrounding the first region of the semiconductor substrate together with the embedded diffusion layer; a second conductivity type first well and a second conductivity type second well which are provided in the first region of the semiconductor substrate and on the embedded diffusion layer at least via the first conductivity type semiconductor layer; and a plurality of transistors provided on the semiconductor substrate. |
