发明名称 Silver Based Conductive Layer for Flexible Electronics
摘要 Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack can have improved ductility property.
申请公布号 US2015327366(A1) 申请公布日期 2015.11.12
申请号 US201514807336 申请日期 2015.07.23
申请人 Intermolecular Inc. 发明人 Hassan Mohd Fadzli Anwar;Ding Guowen;Le Minh Huu;Nguyen Minh Anh Anh;Sun Zhi-Wen Wen;Zhang Guizhen
分类号 H05K1/09;H05K1/02 主分类号 H05K1/09
代理机构 代理人
主权项 1. A coated article comprising: substrate comprising a transparent and flexible material; a first layer formed over the substrate, wherein the first layer comprises a first transparent conductive oxide material; a second layer formed over the first layer, wherein the second layer comprises an alloy, the alloy consisting of silver and Bi, a third layer formed over the second layer, wherein the third layer comprises a second transparent conductive oxide material.
地址 San Jose CA US