| 摘要 |
The present disclosure concerns a multi-bit magnetic randomaccess memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) including: a first magnetic storage layer (231), a second magnetic storage layer (233), a magnetic sense layer (211), a first spacer layer (221) between the first magnetic storage layer (231) and the magnetic sense layer (211), and a second spacer layer (222) between the second magnetic storage layer (233) and the sense layer (211); the first and second storage magnetization (232, 234) being switchable between m directions to store data corresponding to one of m2 logic states, with m>2. The present disclosure further concerns a method for a method for writing and reading to the MRAM cell andto memorydevices including multi-bit MRAM cells. |
