发明名称 SENSOR STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a sensor structure not being affected by a magnetic field generated by current flowing in an integrated circuit.SOLUTION: In a sensor structure, a sensor element 3 and an IC chip 2 having a circuit electrically processing an output signal form the sensor element are laminated, and a magnetic substance 8 is disposed between the IC chip 2 and the sensor element 3, where the magnetic substance 8 reduces effect of a magnetic field generated when current flows into the IC chip 2.
申请公布号 JP2015200546(A) 申请公布日期 2015.11.12
申请号 JP20140078698 申请日期 2014.04.07
申请人 TOKAI RIKA CO LTD 发明人 ISOBE NAOKI;HARA TAKAYUKI
分类号 G01R33/02;G01R15/20;G01R33/07;G01R33/09 主分类号 G01R33/02
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