发明名称 SEMICONDUCTOR DEVICE, HEAT CONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a wiring substrate, a semiconductor element mounted on the wiring substrate, and a heat dissipation component arranged on the wiring substrate. The heat dissipation component includes a cavity that accommodates the semiconductor element and includes an inner surface opposing the wiring substrate. The semiconductor element is located between the inner surface of the cavity and the wiring substrate. A heat conductor is bonded to the semiconductor element and to the inner surface of the cavity. The heat conductor includes linear heat conductive matters arranged between the semiconductor element and the heat dissipation component. A first alloy layer bonded to the semiconductor element covers lower ends of the heat conductive matters. The heat dissipation component includes a through hole extending through the heat dissipation component toward the heat conductor from a location outside of the heat conductor in a plan view.
申请公布号 US2015327397(A1) 申请公布日期 2015.11.12
申请号 US201514694533 申请日期 2015.04.23
申请人 Shinko Electric Industries Co., LTD. 发明人 Murayama Kei;Ihara Yoshihiro
分类号 H05K7/20;H01L23/373;H01L23/367 主分类号 H05K7/20
代理机构 代理人
主权项 1. A semiconductor device comprising: a wiring substrate; a semiconductor element mounted on an upper surface of the wiring substrate; a heat dissipation component arranged on the upper surface of the wiring substrate, wherein the heat dissipation component includes a cavity that accommodates the semiconductor element and includes an inner surface opposing the upper surface of the wiring substrate, and the semiconductor element is located between the inner surface of the cavity and the upper surface of the wiring substrate; and a heat conductor bonded to an upper surface of the semiconductor element and to the inner surface of the cavity, wherein: the heat conductor includes: linear heat conductive matters arranged between the semiconductor element and the heat dissipation component, anda first alloy layer bonded to the upper surface of the semiconductor element, wherein the first alloy layer covers lower ends of the heat conductive matters; and the heat dissipation component includes a through hole extending through the heat dissipation component toward the heat conductor from a location outside of the heat conductor in a plan view.
地址 Nagano-ken JP
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