| 发明名称 |
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES |
| 摘要 |
In a method of manufacturing a semiconductor device, a plasma annealing and supplying a threshold voltage control gas onto a portion of a substrate is performed to form a fixed charge region including a fixed charge at a surface of the substrate. A MOS transistor is formed on the substrate including the fixed charge region. By the above processes, the threshold voltage of the MOS transistor may be easily controlled. |
| 申请公布号 |
US2015325683(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201514612797 |
申请日期 |
2015.02.03 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Cho Keun-Hwi;Kim Dong-Won;Harada Yoshinao;Kang Myung-Gil;Park Jae-Young |
| 分类号 |
H01L29/66;H01L21/265;H01L21/324 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
performing a plasma annealing and supplying a threshold voltage control gas onto a portion of a substrate to form a fixed charge region including a fixed charge at a surface of the substrate; and forming a MOS transistor on the substrate including the fixed charge region. |
| 地址 |
Suwon-si KR |
