| 摘要 |
A thin film transistor array substrate and a manufacturing method therefor. The manufacturing method comprises: forming a polysilicon layer (22) and a gate insulation layer (23) on a substrate (20); forming a metal oxide layer (26) on the gate insulation layer (23); forming a gate metal layer on the metal oxide layer (26); etching the gate metal layer to define a gate (24); etching away the metal oxide layer (26) beyond a second mask by using the gate (24) as the second mask; performing ion implantation by using the gate (24) and the remaining metal oxide layer (26) as a third mask, so as to separately form lightly doped drain regions (30) on two sides of the polysilicon layer (22); forming an insulation layer (25) on the gate (24) and the gate insulation layer (23); forming a metal layer (28) on the insulation layer (25), and defining a source (281) and a drain (282) so that the source (281) and the drain (282) are respectively connected to a source doped region (222) and a drain doped region (221). In this manner, the uniformity of ion implantation doses is kept and the brightness uniformity of a display is further maintained. |
