| 发明名称 |
NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS |
| 摘要 |
Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires. A pair of non-discrete source and drain regions is disposed on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires. |
| 申请公布号 |
US2015325648(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201514803919 |
申请日期 |
2015.07.20 |
| 申请人 |
CEA Stephen M.;CAPPELLANI Annalisa;GILES Martin D.;RIOS Rafael;KIM Seiyon;KUHN Kelin J. |
发明人 |
CEA Stephen M.;CAPPELLANI Annalisa;GILES Martin D.;RIOS Rafael;KIM Seiyon;KUHN Kelin J. |
| 分类号 |
H01L29/06;H01L29/423;H01L29/08;H01L29/66;H01L21/268 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a nanowire semiconductor device, the method comprising:
forming a plurality of vertically stacked nanowires above a substrate, each of the nanowires comprising a discrete channel region disposed in the nanowire; forming a gate electrode stack surrounding the discrete channel regions of the plurality of vertically stacked nanowires; and forming a pair of non-discrete source and drain regions on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires. |
| 地址 |
Hillsboro OR US |
