FRONT SIDE ILLUMINATED SEMICONDUCTOR STRUCTURE WITH IMPROVED LIGHT ABSORPTION EFFICIENCY AND MANUFACTURING METHOD THEREOF

摘要

There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.

主权项

1. A front side illuminated semiconductor structure comprising:
a transparent layer having an upper surface and a lower surface, wherein the upper surface is configured to receive incident light which penetrates the transparent layer and leaves from the lower surface to form emergent light; a chip structure comprising a light sensing region and a base layer, wherein a part of the emergent light sequentially penetrates the light sensing region and the base layer; and a reflecting layer formed on a bottom surface of the base layer and configured to reflect the part of the emergent light back to the light sensing region to be absorbed by the light sensing region again.