| 发明名称 |
HIGH DENSITY SRAM ARRAY DESIGN WITH SKIPPED, INTER-LAYER CONDUCTIVE CONTACTS |
| 摘要 |
A static random access memory (SRAM) cell includes a first conductive layer including a wordline landing pad extending into a neighboring memory cell in an adjacent row of a memory array. The wordline landing pad in the first conductive layer is electrically isolated from all gate contacts of the neighboring memory cell. The SRAM cell also includes a second conductive layer including a wordline coupled to the wordline landing pad in the first conductive layer. The SRAM cell further includes a first via coupling a gate contact of a pass transistor gate in the SRAM cell to the wordline landing pad in the first conductive layer. The SRAM cell also includes a second via coupling the wordline landing pad and the wordline of the second conductive layer. |
| 申请公布号 |
US2015325514(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201414274378 |
申请日期 |
2014.05.09 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
MOJUMDER Niladri Narayan;WANG Zhongze;SONG Stanley Seungchul;YEAP Choh Fei |
| 分类号 |
H01L23/522;H01L21/768;H01L27/11 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A static random access memory (SRAM) cell, comprising:
a first conductive layer including a wordline landing pad extending into a neighboring memory cell in an adjacent row of a memory array, the wordline landing pad in the first conductive layer being electrically isolated from all gate contacts of the neighboring memory cell; a second conductive layer including a wordline coupled to the wordline landing pad in the first conductive layer; a first via coupling a gate contact of a pass transistor gate in the SRAM cell to the wordline landing pad in the first conductive layer; and a second via coupling the wordline landing pad and the wordline of the second conductive layer. |
| 地址 |
San Diego CA US |
