发明名称 ALIGNMENT TO MULTIPLE LAYERS
摘要 A method of aligning a new pattern to more than one previously defined pattern during the manufacture of an integrated circuit. A method of aligning a photolighography pattern reticle to a first previously defined pattern in a first direction and also aligning the photolithography pattern reticle to a second previously defined pattern in a second direction. A method of aligning a photolighography pattern reticle to two previously defined patterns in the same direction.
申请公布号 US2015325472(A1) 申请公布日期 2015.11.12
申请号 US201514803538 申请日期 2015.07.20
申请人 Texas Instruments Incorporated 发明人 ATON Thomas John;PRINS Steven Lee;JESSEN Scott William
分类号 H01L21/768;H01L21/283;H01L21/28 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method of fabricating an integrated circuit, comprising: forming a layer of gate material having a plurality of gate leads in an integrated circuit chip and a first alignment mark separate from the plurality of gate leads formed in the layer of gate material; forming a dielectric layer having a plurality of contacts plugs formed therein and a second alignment mark separate from the plurality of contacts plugs formed therein; and aligning a reticle having a first interconnect double pattern to the first alignment mark in the layer of gate material and to the second alignment mark formed in the dielectric layer, wherein said reticle is aligned to the first alignment mark in a first direction and is aligned to the second alignment mark in a second direction.
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