SELECTIVE CONDUCTIVE BARRIER LAYER FORMATION

摘要

A semiconductor device includes a die having a via (304) coupling a first interconnect layer (110) to a trench (302). The semiconductor device also includes a barrier layer (306) on sidewalls and adjacent surfaces of the trench, and on sidewalls of the via. The semiconductor device has a doped conductive layer (308) on a surface of the first interconnect layer. The doped conductive layer extends between the sidewalls of the via. The semiconductor device further includes a conductive material (202) on the barrier layer in both the via and the trench. The conductive material is on the doped conductive layer disposed on the surface of the first interconnect layer.