发明名称 |
SEMICONDUCTOR APPARATUS, METHOD FOR FABRICATING THE SAME, AND VARIABLE RESISTIVE MEMORY DEVICE |
摘要 |
A semiconductor apparatus that includes a semiconductor substrate and a plurality of pillars formed in the semiconductor substrate. Each of the plurality of pillars includes a first pillar, and a second pillar formed on the first pillar, wherein the second pillar has a smaller linewidth than the first pillar. |
申请公布号 |
US2015325695(A1) |
申请公布日期 |
2015.11.12 |
申请号 |
US201414329555 |
申请日期 |
2014.07.11 |
申请人 |
SK hynix Inc. |
发明人 |
SUH Jun Kyo;CHOI Kang Sik |
分类号 |
H01L29/78;H01L29/66;H01L27/24 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor apparatus comprising:
a semiconductor substrate; and a plurality of pillars formed in the semiconductor substrate, wherein each of the plurality of pillars includes a first pillar, and a second pillar formed on the first pillar, wherein the second pillar has a smaller linewidth than the first pillar. |
地址 |
Gyeonggi-do KR |