Rectifier Structures with Low Leakage

摘要

An integrated circuit device includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, a gate dielectric over the second III-V compound layer, and a gate electrode over the gate dielectric. An anode electrode and a cathode electrode are formed on opposite sides of the gate electrode. The anode electrode is electrically connected to the gate electrode. The anode electrode, the cathode electrode, and the gate electrode form portions of a rectifier.

主权项

1. A method comprising:
implanting a first portion of a second III-V compound layer with negatively charged ions, wherein the second III-V compound layer is over a first III-V compound layer, and the first III-V compound layer has a first bandgap different from a second bandgap of the second III-V compound layer, and wherein the second III-V compound layer comprises a second portion and a third portion on opposite sides of the first portion; forming a first electrode electrically connected to the second portion of the second III-V compound layer; forming a second electrode electrically connected to the third portion of the second III-V compound layer; forming a gate dielectric over the first portion of the second III-V compound layer; and forming a gate electrode over the gate dielectric.