发明名称 SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 In some aspects of the invention, a layer containing titanium and nickel is formed on an SiC substrate. A nickel silicide layer containing titanium carbide can be formed by heating. A carbon layer precipitated is removed by reverse sputtering. Thus, separation of an electrode of a metal layer formed on nickel silicide in a subsequent step is suppressed. The effect of preventing the separation can be further improved when the relation between the amount of precipitated carbon and the amount of carbon in titanium carbide in the surface of nickel silicide from which the carbon layer has not yet been removed satisfies a predetermined condition.
申请公布号 US2015325666(A1) 申请公布日期 2015.11.12
申请号 US201514802092 申请日期 2015.07.17
申请人 FUJI ELECTRIC CO., LTD. 发明人 IMAI Fumikazu
分类号 H01L29/45;H01L29/872;H01L29/16 主分类号 H01L29/45
代理机构 代理人
主权项
地址 Kawasaki-shi JP