HIGH-VOLTAGE SUPER JUNCTION BY TRENCH AND EPITAXIAL DOPING

摘要

A high-voltage super junction device is disclosed. The device includes a semiconductor substrate region having a first conductivity type and having neighboring trenches disposed therein. The neighboring trenches each have trench sidewalls and a trench bottom surface. A region having a second conductivity type is disposed in or adjacent to a trench and meets the semiconductor substrate region at a p-n junction. A gate electrode is formed on the semiconductor substrate region and electrically is electrically isolated from the semiconductor substrate region by a gate dielectric. A body region having the second conductivity type is disposed on opposite sides of the gate electrode near a surface of the semiconductor substrate. A source region having the first conductivity type is disposed within in the body region on opposite sides of the gate electrode near the surface of the semiconductor substrate.

主权项

1. A method, comprising:
providing a semiconductor substrate region having a first conductivity type; forming neighboring trenches in the semiconductor substrate region; forming an epitaxial (EPI) liner, which has a second conductivity type, along sidewalls of the trenches and over bottom surfaces of the trenches; performing a thermal treatment to out-diffuse dopants from the EPI liner into a surrounding portion of the semiconductor substrate region, thereby forming an out-diffused region having the second conductivity type; forming a gate dielectric and a gate electrode over the semiconductor substrate region between the neighboring trenches; forming body regions at least partially under the gate electrode in the semiconductor substrate region; and forming source regions on opposite sides of the gate electrode and adjacent to the body regions.