| 发明名称 |
MEMORY DEVICE AND METHOD OF MANUFACTURING MEMORY DEVICE |
| 摘要 |
Provided is a storage apparatus provided with a plurality of storage elements having storage layers comprising a plurality of layers and electrodes, one layer among the plurality of layers being extended in a first direction and being shared by the plurality of storage elements disposed in the first direction, the electrodes being extended in a second direction that differs from the first direction and being shared by the plurality of storage elements disposed in the second direction. |
| 申请公布号 |
US2015325628(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201314650448 |
申请日期 |
2013.11.21 |
| 申请人 |
Sony Corporation |
发明人 |
Nonoguchi Seiji;Sone Takeyuki;Ikarashi Minoru;Narisawa Hiroaki;Aratani Katsuhisa |
| 分类号 |
H01L27/24;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device comprising a plurality of memory cells that each include an electrode and a storage layer, the storage layer being configured of a plurality of layers,
wherein one layer of the plurality of layers is extended in a first direction and is shared by the plurality of memory cells arranged in the first direction, and the electrode is extended in a second direction and is shared by the plurality of memory cells arranged in the second direction, the second direction being different from the first direction. |
| 地址 |
Tokyo JP |
