INTEGRATED CIRCUIT PROTECTED FROM SHORT CIRCUITS CAUSED BY SILICIDE

摘要

An integrated circuit is formed on a semiconductor substrate and includes a trench conductor and a first transistor formed on the surface of the substrate. The transistor includes: a transistor gate structure, a first doped region extending in the substrate between a first edge of the gate structure and an upper edge of the trench conductor, and a first spacer formed on the first edge of the gate structure and above the first doped region. The first spacer completely covers the first doped region and a silicide is present on the trench conductor but is not present on the surface of the first doped region.

主权项

1. An integrated circuit, comprising:
a trench conductor that includes:
a trench formed in a semiconductor substrate;an insulating layer on sidewalls of the trench; anda semiconductor material filling the trench; a first transistor formed on a surface of the substrate, the transistor including:
a transistor gate structure;a first doped region extending in the substrate between a first edge of the gate structure and an upper edge of the trench conductor; anda first spacer formed on the first edge of the gate structure and above the first doped region, the first spacer completely covering a surface of the first doped region, extending beyond the first doped region, and overlapping the insulating layer; a silicide layer on a surface of the semiconductor material of the trench conductor but is not present on the surface of the first doped region; a second doped region extending in the substrate from a second edge of the gate structure, the second edge being on an opposite side of the gate structure with respect to the first edge; and a second spacer formed on the second edge of the gate structure and above the second doped region, wherein the first spacer has a length greater than a length of the second spacer.