| 发明名称 |
RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD |
| 摘要 |
The resist material according to the present invention comprises a compound represented by formula (1). (In formula (1), each R0 is independently a monovalent group containing an oxygen atom; a monovalent group containing a sulfur atom; a monovalent group containing a nitrogen atom; a hydrocarbon group; or a halogen atom. Each p is independently an integer of 0 to 4). |
| 申请公布号 |
WO2015170734(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
WO2015JP63272 |
申请日期 |
2015.05.08 |
| 申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
发明人 |
TOIDA, TAKUMI;SATO, TAKASHI;ECHIGO, MASATOSHI |
| 分类号 |
G03F7/004;G03F7/038;G03F7/039;H01L21/027 |
主分类号 |
G03F7/004 |
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