| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an MIM tunnel diode in which an extremely thin and uniform insulation layer can be formed on a first metal layer easily by plasma oxidation. <P>SOLUTION: A method for manufacturing an MIM tunnel diode in which a first metal layer 14 composed of nickel, an insulation layer 16 composed of nickel oxide having a thickness of 1 to 10 nm, and a second metal layer 18 are laminated in this order on an insulating substrate 12 includes an insulation layer forming step for forming an insulation layer by oxidizing the first metal layer by plasma oxidation method. When the first metal layer is oxidized by plasma oxidation method in the insulation layer forming step, a parallel-plate plasma generating device is used, and the oxygen pressure p(Pa), the self-bias voltage V<SB POS="POST">DC</SB>(V) and the processing time t(min) of the parallel-plate plasma generating device are set to satisfy the following conditions; 6.8≤p≤12.0, 290≤V<SB POS="POST">DC</SB>≤400, 3≤t≤6. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
