发明名称 DUAL WAFER ATTACHMENT PROCESS
摘要 <p>Producing the microstructures on separate substrates, which are bonded. One of these structures may be temperature sensitive CMOS electronics. There may be a high-temperature thermal sensor on one wafer and low-temperature CMOS electronics. In the case where the bonding material is polyimide, the polyimide on both surfaces to be bonded is soft baked. The wafers are placed in a wafer bonder and, using precision alignment, brought into contact. The application of pressure and heat forms a bond between the two coatings of polyimide. A wafer may need to be removed from a combined structure. One of the bonded structures may be placed on a sacrificial layer that can be etched away to facilitate removal of a wafer without grinding. After wafer removal, a contact from the backside of one of the structures now on polyimide to the other on the wafer may be made. Sacrificial material, for example, polyimide, may be removed from between the structures that are connected via a contact. A microstructure may be bonded with something that is not a microstructure, such as single-or multi-layer material, crystalline or amorphous.</p>
申请公布号 EP1198835(B1) 申请公布日期 2015.11.11
申请号 EP20000955324 申请日期 2000.08.02
申请人 HONEYWELL INC. 发明人 COLE, BARRETT, E.;RIDLEY, JEFFREY, A.;HIGASHI, ROBERT, E.
分类号 H01L21/8238;H01L21/98;G01J5/20;G01K7/02;H01L21/02;H01L23/48;H01L25/065;H01L27/092 主分类号 H01L21/8238
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