| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for growing group III nitride crystals which allows growing group III nitride crystals with large size and high crystallinity using a plurality of chip substrates. <P>SOLUTION: The method for growing group III nitride crystals includes steps of: preparing a plurality of group III nitride chip substrates 10 with anglesα,β,γ, formed by the respective normal lines Na, Nb, Nc of the side faces 10s and the direction Ch projecting an axis <0001> on a main face, being other than 90 degree while having a main face 10m with an off-angleψfrom a face (0001) and a plurality of the side faces 10s; mutually and adjacently arranging the side faces 10s so that the respective directions C of the axis <0001> of the plurality of the group III nitride crystal chip substrates are in parallel with each other; and allowing growing the group III nitride crystals 20 on the main face 10m of the arranged plurality of the group III nitride chip substrates 10. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
