发明名称 窒化物基板の製造方法
摘要 <p>A method of manufacturing a nitride substrate (10) includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate (10) including a front surface (11) is cut from the nitride crystal. In the step of cutting, the nitride substrate (10) is cut such that an off angle formed between an axis orthogonal to the front surface (11) and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate (10) is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.</p>
申请公布号 JP5812151(B2) 申请公布日期 2015.11.11
申请号 JP20140101578 申请日期 2014.05.15
申请人 发明人
分类号 C30B33/00;C30B29/38 主分类号 C30B33/00
代理机构 代理人
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