PIEZOELECTRIC/ELECTROSTRICTIVE FILM TYPE ELEMENT AND METHOD FOR PRODUCING PIEZOELECTRIC/ELECTROSTRICTIVE FILM TYPE ELEMENT

摘要

Provided is a piezoelectric/electrostrictive film type element in which the film thickness of an electrode film fixed adherently on a substrate and a piezoelectric/electrostrictive film is small, the coverage of the electrode film is high, and the piezoelectric/electrostrictive film has good durability and insulation quality. The piezoelectric/electrostrictive film type element includes a substrate, a lower electrode film, a piezoelectric/electrostrictive film and an upper electrode film. The substrate and the lower electrode film are fixed adherently each other. The piezoelectric/electrostrictive film and the lower electrode film are fixed adherently each other. The film thickness of the lower electrode film is 1 µm or less. The coverage of the lower electrode film is 90% or more. The piezoelectric/electrostrictive film is composed of a piezoelectric/electrostrictive ceramic. The piezoelectric/electrostrictive ceramic contains lead zirconate titanate and a bismuth compound. The bismuth/lead ratio in the peripheral section inside the grain which is relatively close to the grain boundary is greater than the bismuth/lead ratio in the center section inside the grain which is relatively far from the grain boundary.