发明名称 プラズマ処理装置及び基材の表面処理方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a surface treatment method for a base material capable of reducing production cost. <P>SOLUTION: The plasma treatment apparatus is equipped with a chamber 1, a base material holder 3 arranged in the chamber 1 and supporting a base material 2, a gas introduction path connected to the chamber 1 and introducing treating gas for etching into the chamber 1, and a high-frequency power source 4 for supplying high-frequency output of 50 to 500 kHz into the chamber 1, and produces plasma of the treating gas for etching in the chamber 1 by the high-frequency output supplied from the high-frequency power source 4 to remove a surface layer of the base material 2. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5810462(B2) 申请公布日期 2015.11.11
申请号 JP20110159917 申请日期 2011.07.21
申请人 地方独立行政法人山口県産業技術センター;株式会社ユーテック 发明人 井手 幸夫;本多 祐二
分类号 C23G3/00;C23C16/02;C23C16/56;H05H1/46 主分类号 C23G3/00
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