| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve, in a small area, a structure that relaxes the electric-field strength around a power semiconductor element. <P>SOLUTION: In a peripheral region Q, a plurality of polycrystalline silicon layers 70 are provided between a source region 30 and an end drain electrode 41 via a peripheral interlayer insulating layer (an insulating layer) between the polycrystalline silicon layers 70 and a semiconductor layer. In the polycrystalline silicon layers 70, inclination portions in which their longitudinal direction are inclined from the horizontal direction (the inclination angle isθ, where 0<θ<90°) are provided. In the inclination portions of the polycrystalline silicon layers 70, a plurality of p-type regions 71 and n-type regions 72 are alternately formed in the longitudinal direction. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
