发明名称 |
METHOD FOR PRODUCING HIGH-PURITY POLYCRYSTALLINE SILICON |
摘要 |
The present invention provides technology for realizing higher purification of a polycrystalline silicon. First, trichlorosilane is prepared as a sample (S101) and then the carbon-containing impurities content in the trichlorosilane is analyzed by GC/MS-SIM method (S102). The quality of the trichlorosilane is determined based on the analysis results (S103) and the trichlorosilane determined to be a good material (S103:Yes) is used as the raw material for producing a high-purity polycrystalline silicon by CVD method (104). In case, the trichlorosilane determined to be a bad material (S103: No) is not used as the raw material for producing a polycrystalline silicon. When the impurities analysis by GC/MS-SIM method is performed using, as a separation column, a column having a non-polar column and a medium-polar column connected in series with each other, it is possible to simultaneously perform both of the separation of chlorosilanes and hydrocarbons and the separation of chlorosilanes and methylsilanes. |
申请公布号 |
EP2862840(A4) |
申请公布日期 |
2015.11.11 |
申请号 |
EP20130804452 |
申请日期 |
2013.06.13 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
FUNAZAKI, KAZUNORI;SATO, KAZUOMI;MIYAO, SHUICHI |
分类号 |
C01B33/03;C01B33/035;G01N33/00;H01L21/02;H01L21/66 |
主分类号 |
C01B33/03 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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