| 摘要 |
<p>The present invention relates to a capacitive-coupled parallel plate plasma enhanced chemical vapour deposition reactor, comprising a gas distribution unit being integrated in an RF electrode and comprising a gas outlet. It is the object of the present invention to provide parallel plate reactor of the referenced type with what layers with high thickness homogeneity and quality can be produced. The object is solved by a capacitive-coupled parallel plate plasma enhanced vapour deposition reactor of the mentioned type wherein the gas distribution unit comprises a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.</p> |
