发明名称 |
Crystalline multilayer structure and semiconductor device |
摘要 |
Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented. |
申请公布号 |
EP2942804(A1) |
申请公布日期 |
2015.11.11 |
申请号 |
EP20140199110 |
申请日期 |
2014.12.19 |
申请人 |
FLOSFIA INC. |
发明人 |
HITORA, TOSHIMI;ODA, MASAYA;TAKATSUKA, AKIO |
分类号 |
H01L29/66;H01L21/02;H01L29/04;H01L29/10;H01L29/22;H01L29/24;H01L29/772;H01L29/778;H01L29/808;H01L29/812;H01L29/872;H01L33/26;H01L33/28;H01L33/42 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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