| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a production method of a single crystal of a group III nitride semiconductor capable of producing a single crystal of a group III nitride semiconductor that is easy to peel a growth substrate and excellent in crystallinity, and a production method of a GaN substrate.SOLUTION: A mask layer 140 is formed on a GaN substrate G10, a growth substrate. A plurality of concaves X11 are formed using photo-lithography so as to reach the GaN substrate G10 starting from the mask layer 140. The GaN substrate G10 and a raw material of a single crystal are put in a crucible whose pressure and temperature are then increased. The GaN substrate G10 exposed at the concaves X11 undergoes meltback by flux. Melting of the GaN substrate G10 enlarges the concaves X11 to concaves X12. A GaN layer 150 grows from a surface 144 of the mask layer 140 as a base point so as not to cover the concaves X12.</p> |
