| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer that can reduce oxygen precipitation to prevent wafer deformation from occurring even when subjected to rapid temperature increase/decrease heat treatment and can prevent slip extension from occurring due to boat scratches and transfer scratches causing strength deterioration of a wafer.SOLUTION: A manufacturing method of a silicon epitaxial wafer includes an epitaxial step for growing an epitaxial layer on the surface of a substrate that is doped with boron so as to have an ohmic value of 0.02Ωcm - 1 kΩcm and has an initial oxygen concentration Oi of 14.0×10- 22×10atoms/cm(Old-ASTM), and a deposition/dissolution/heat treatment step for subjecting the substrate to treatment under conditions of a treatment temperature of 1,150°C-1,300°C, a holding time of 5 sec - 1 min, and a temperature descending speed of 10°C/sec - 0.1°C/sec before and after the epitaxial step.</p> |
