| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus in which a shot shape of an electron beam can be suppressed from being distorted in accordance with a deflection position, and a charged particle beam lithography method. <P>SOLUTION: In an electron beam lithography apparatus 100, a deflection voltage obtained by also correcting an XY difference together with main deflection astigmatism correction is applied to a main deflector 208 and a sub deflector 209, and a desired pattern is drawn on a sample 216. Therefore, the electron beam lithography apparatus 100 comprises a main deflection correction amount arithmetic section 122 which calculates a correction amount of a deflection signal to be applied to the main deflector 208, a sub deflection correction amount arithmetic section 123 which calculates a second correction amount correcting the correction amount of a deflection signal to be applied to the sub deflector 209, and a deflection signal generation section 124 which generates the deflection signal to be applied to the main deflector 208 using the first correction amount and generates the deflection signal to be applied to the sub deflector 209 using the second correction amount. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
