METHOD OF FORMING A FINFET AND INTEGRATED CIRCUIT DEVICE

摘要

The present invention relates to methods to form an FinFET. According to an embodiment of the present invention, the FinFET forming method includes a step of forming a fin-shaped channel area including indium on a substrate; a step of forming a deep source/drain area on the substrate to be adjacent to the channel area; and a step of forming a source/drain expansion area between the channel area and the deep source/drain area. Facing side walls of the source/drain expansion area make contact with the channel area and the deep source/drain area. The source/drain expansion area includes InyGa1-yAs including y in a range of 0.3 to 0.5.