GROUP-III NITRIDE CRYSTAL SUBSTRATE, GROUP-III NITRIDE CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

摘要

A group III nitride crystal substrate is provided in which, wherein, a plane spacing of arbitrary specific parallel crystal lattice planes of the crystal substrate being obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a main surface (1s) of the crystal substrate while X-ray diffraction conditions of the specific parallel crystal lattice planes of the crystal substrate are satisfied, a uniform distortion at a surface layer of the crystal substrate represented by a value of |d 1 - d 2 |/d 2 obtained from a plane spacing d 1 at the X-ray penetration depth of 0.3 µm and a plane spacing d 2 at the X-ray penetration depth of 5 µm is equal to or lower than 1.9 x 10 -3 , and wherein the main surface (1s) has a plane orientation inclined in the <10-10> direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes (1c) of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.