| 摘要 |
<p>Programmer's data is initially stored in a memory device of the storage device by using an MBC storage scheme. After the storage device is embedded in a host device, the programmer's data is internally read from the memory device by using conventional read reference voltages, and the number of erroneous data bits in the programmer's data is calculated. If the programmer's data includes an uncorrectable number of erroneous data bits, the programmer's data is iteratively reread by using unconventional read reference voltages with decreased levels. The iteration process, which includes decreasing the level of the read reference voltages and recalculating the number of erroneous data bits, is terminated when the number of erroneous data bits in the programmer's is less than or equals a predetermined number of erroneous data bits, after which the storage device restores the programmer's data and conventionally rewrites it into the memory device.</p> |
