发明名称 Display panel and display device
摘要 According to one embodiment, a display panel includes a substrate, a switching element, a pixel electrode, an organic light emitting layer, an opposite electrode, a detecting electrode, and an insulating layer. The substrate has a major surface. The switching element is provided on the major surface. The switching element includes a semiconductor layer. The pixel electrode is provided on the major surface. The pixel electrode is electrically connected to the switching element. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The detecting electrode is provided between the substrate and at least a part of the pixel electrode. The detecting electrode includes at least one element included in the semiconductor layer. The insulating layer is provided between the pixel electrode and the detecting electrode.
申请公布号 US9184408(B2) 申请公布日期 2015.11.10
申请号 US201213721925 申请日期 2012.12.20
申请人 Kabushiki Kaisha Toshiba 发明人 Saito Nobuyoshi;Ueda Tomomasa;Yamaguchi Hajime;Miura Kentaro;Nakano Shintaro;Sakano Tatsunori
分类号 H01L23/00;H01L51/52;H01L27/32 主分类号 H01L23/00
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A display panel comprising: a substrate having a major surface, the substrate being light transmissive; a switching element provided on the major surface and including a semiconductor layer; a pixel electrode provided on the major surface and electrically connected to the switching element, the pixel electrode being light transmissive; an organic light emitting layer provided on the pixel electrode; an opposite electrode provided on the organic light emitting layer; a detecting electrode provided between the substrate and at least a part of the pixel electrode and including at least one element included in the semiconductor layer, the detecting electrode being light transmissive; an insulating layer provided between the pixel electrode and the detecting electrode, the insulating layer being light transmissive, the pixel electrode, the detecting electrode, and the insulating layer forming a detecting capacitor; an amplifier transistor having a gate electrode, the gate electrode being electrically connected to the detecting capacitor; and an output signal line being electrically connected to the amplifier transistor, the amplifier transistor passing a current depending on a capacitance of the detecting capacitor to the output signal line, wherein the semiconductor layer and the detecting electrode each independently comprise an amorphous oxide which comprises at least one of In, Ga, and Zn.
地址 Tokyo JP