Light emitting diode and light emitting diode lamp

摘要

A light emitting diode is provided by the present invention which includes a pn junction-type light emitting unit having a light emitting layer (10) composed of n layers of a strained light emitting layer (12) and n−1 layers of a barrier layer (13), wherein when a barrier layer exists, the light emitting layer (10) has a structure in which one strained light emitting layer (12) and one barrier layer (13) are laminated alternately, n represents an integer of 1 to 7, and the thickness of the light emitting layer (10) is not more than 250 nm.

主权项

1. A light emitting diode comprising a pn junction-type light emitting unit having a light emitting layer composed of n layers of a strained light emitting layer and n−1 layers of a barrier layer, wherein
when a barrier layer exists, the light emitting layer has a structure in which one strained light emitting layer and one barrier layer are laminated alternately, n represents an integer of 1 to 7, and a thickness of the light emitting layer is not more than 250 nm, a composition formula of the strained light emitting layer is (AlXGa1-X)YIn1-YP(wherein 0≦X≦0.1 and 0.37≦Y≦0.46); the light emitting diode further comprises a compound semiconductor layer comprising at least the light emitting unit and a strain adjustment layer laminated on the light emitting unit, and a functional substrate bonded to a surface of the strain adjustment layer: and wherein: the strain adjustment layer has a lattice constant that is smaller than a lattice constant of the strained light emitting layer and a lattice constant of GaAs, when a barrier layer exists, the lattice constant of the strain adjustment layer is smaller than a lattice constant of the barrier layer, and the strain adjustment layer has a thickness within a range of 0.5 to 20 μm.