Semiconductor device and method of fabricating the same

摘要

A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a semiconductor active region disposed on a surface of the semiconductor substrate, wherein the semiconductor active region protrudes away from the surface of the semiconductor substrate, wherein the semiconductor active region includes first and second sidewalls and a round top surface disposed between the first and second sidewalls and wherein the round top surface has no flat portion; and an isolation layer disposed on the surface of the semiconductor substrate to define the semiconductor active region, wherein the semiconductor active region protrudes beyond a surface of the isolation layer.