| 发明名称 | Methods of fabricating semiconductor device having shallow trench isolation (STI) | ||
| 摘要 | Methods of fabricating a semiconductor device include forming a field trench in a silicon substrate, forming a first oxide layer in the field trench, forming a first thinned oxide layer by partially removing a surface of the first oxide layer, and forming a first nitride layer on the first thinned oxide layer. | ||
| 申请公布号 | US9184086(B2) | 申请公布日期 | 2015.11.10 |
| 申请号 | US201314138552 | 申请日期 | 2013.12.23 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Park Tai-Su;Seo Mi-Young;Park Sung-Wook |
| 分类号 | H01L21/76;H01L21/762 | 主分类号 | H01L21/76 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A method of fabricating a semiconductor device, comprising: forming a field trench in a silicon substrate; forming a first oxide layer in the field trench, the first oxide layer being on an inner wall and a bottom of the field trench; forming a first thinned oxide layer by partially removing a surface of the first oxide layer, the first thinned oxide layer being disposed on the inner wall and the bottom of the field trench; and forming a first nitride layer on the first thinned oxide layer to fill in the field trench. | ||
| 地址 | Gyeonggi-Do KR | ||