发明名称 Density multiplication and improved lithography by directed block copolymer assembly
摘要 Methods to pattern substrates with dense periodic nanostructures that combine top-down lithographic tools and self-assembling block copolymer materials are provided. According to various embodiments, the methods involve chemically patterning a substrate, depositing a block copolymer film on the chemically patterned imaging layer, and allowing the block copolymer to self-assemble in the presence of the chemically patterned substrate, thereby producing a pattern in the block copolymer film that is improved over the substrate pattern in terms feature size, shape, and uniformity, as well as regular spacing between arrays of features and between the features within each array compared to the substrate pattern. In certain embodiments, the density and total number of pattern features in the block copolymer film is also increased. High density and quality nanoimprint templates and other nanopatterned structures are also provided.
申请公布号 US9183870(B2) 申请公布日期 2015.11.10
申请号 US200812329484 申请日期 2008.12.05
申请人 Wisconsin Alumni Research Foundation;HGST Netherlands B.V. 发明人 Nealey Paul Franklin;Kang Huiman;Detcheverry Francois;De Pablo Juan J.;Ruiz Ricardo;Albrecht Thomas
分类号 G11B5/64;G11B5/855;B81C1/00;B82Y10/00;B82Y30/00;B82Y40/00;G03F7/00;G11B5/74;G11B5/82 主分类号 G11B5/64
代理机构 Weaver Austin Villeneuve & Sampson LLP 代理人 Weaver Austin Villeneuve & Sampson LLP
主权项 1. A nanoimprint template comprising: a template body; and a plurality of tracks on the template body that extend circumferentially around a center point, the tracks comprising recessed or raised periodic features, wherein the density of said features is greater than about 1 tera-feature per square inch, wherein the features are arranged in cross-track and down-track directions, the cross-track direction extending radially from the center point and the down-track direction extending circumferentially along the plurality of tracks, wherein the features are evenly spaced in the cross-track direction over a distance of at least 1 millimeter, and wherein each feature comprises a top surface having a lateral dimension, wherein the standard deviation of the lateral dimensions of the features is no more than about 5% of the mean lateral dimension.
地址 Madison WI US