| 发明名称 | Ultraviolet reflective contact | ||
| 摘要 | A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers. | ||
| 申请公布号 | US9184346(B2) | 申请公布日期 | 2015.11.10 |
| 申请号 | US201213711675 | 申请日期 | 2012.12.12 |
| 申请人 | Sensor Electronic Technology, Inc. | 发明人 | Lunev Alexander;Dobrinsky Alexander;Shatalov Maxim S.;Gaska Remigijus;Shur Michael |
| 分类号 | H01L29/22;H01L33/32;H01L29/45;H01L29/20;H01L33/42;H01L33/40 | 主分类号 | H01L29/22 |
| 代理机构 | LaBatt, LLC | 代理人 | LaBatt, LLC |
| 主权项 | 1. A contact comprising: an ohmic layer, wherein the ohmic layer is transparent to radiation having a target wavelength, wherein the ohmic layer includes a plurality of islands, and wherein an average distance between the plurality of islands is less than a current spreading length of a semiconductor layer adjacent to the contact; and a reflective layer located on the ohmic layer, wherein the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength, and wherein the target wavelength is within a range of wavelengths between approximately 260 and approximately 360 nanometers. | ||
| 地址 | Columbia SC US | ||