Lighting-emitting device with nanostructured layer and method for fabricating the same

摘要

A light emitting device has a nanostructured layer with nanovoids. The nanostructured layer can be provided below and adjacent to active region or on a substrate or a template below an n-type layer for the active region, so as to reduce strain between epitaxial layers in the light emitting device. A method of manufacturing the same is provided.

主权项

1. A light emitting device comprising:
an n-type layer; a p-type layer; an active region sandwiched between the n-type layer and the p-type layer; and a continuous nanostructured layer with nanovoids formed therein, the nanovoids having openings exposed to an upper surface of the continuous nanostructured layer on which upper surface a subsequent layer is to grow, wherein the continuous nanostructured layer has a thickness in the range of 50-1000 nm, a nanovoid surface filling factor of the nanostructured continuous layer is in the range of 4%-50%, and the nanovoids have a finishing lateral dimension in the range of 50-500 nm and a depth in the range of 20-550 nm, and wherein the n-type layer is sandwiched between the continuous nanostructured layer and the active region, or the continuous nanostructured layer is sandwiched between the n-type layer and the active region and in direct contact with the active region.