| 发明名称 | Light emitting devices with built-in chromaticity conversion and methods of manufacturing | ||
| 摘要 | Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device. | ||
| 申请公布号 | US9184336(B2) | 申请公布日期 | 2015.11.10 |
| 申请号 | US201414489344 | 申请日期 | 2014.09.17 |
| 申请人 | Micron Technology, Inc. | 发明人 | Basceri Cem;Gehrke Thomas;Watkins Charles M. |
| 分类号 | H01L21/00;H01L33/00;H01L33/50;H01L33/06;H01L33/08;H01L33/38 | 主分类号 | H01L21/00 |
| 代理机构 | Perkins Coie LLP | 代理人 | Perkins Coie LLP |
| 主权项 | 1. A method for manufacturing a light emitting device, the method comprising: forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission via electroluminescence; and forming a superlattice structure on the second semiconductor material, the superlattice structure being configured to produce a second emission that, when combined with the first emission, appears as white light to the human eye. | ||
| 地址 | Boise ID US | ||